Модуль памяти DDR3 UDIMM, 4GB 1866MT/s, 240-pin, 256Mx16, Samsung, 1.5V / 1.35V, -25...+85°C
Модуль памяти DDR3 UDIMM, 2GB 1866MT/s, 240-pin, 256Mx16, Samsung, 1.5V / 1.35V, -25...+85°C
Модуль памяти DDR4 UDIMM, 16GB 2666MT/s, 288-pin, 1Gx8, SK Hynix, 1.2V, -25...+85°C
Модуль памяти DDR4 UDIMM, 16GB 2400MT/s, 288-pin, 1Gx8, SK Hynix, 1.2V, -25...+85°C
Модуль памяти DDR4 UDIMM, 8GB 2666MT/s, 288-pin, 1Gx8, SK Hynix, 1.2V, -25...+85°C
Модуль памяти DDR4 UDIMM, 8GB 2400MT/s, 288-pin, 1Gx8, SK Hynix, 1.2V, -25...+85°C
Модуль памяти DDR4 UDIMM, 8GB 2400MT/s, 288-pin, 512Mx8, SK Hynix, 1.2V, -25...+85°C
Модуль памяти DDR4 UDIMM, 4GB 2400MT/s, 288-pin, 512Mx8, SK Hynix, 1.2V, -25...+85°C
Модуль памяти DDR4 UDIMM, 32GB 3200MT/s, 288-pin, 2Gx8 E-die, Micron, 1.2V, -25...+85°C
Модуль памяти DDR3L SODIMM+ECC, 8GB 1600MT/s, 204-pin, 512Mx8, Samsung, 1.5V/1.35V, -25...+85°C
Модуль памяти DDR3L SODIMM+ECC, 4GB 1600MT/s, 204-pin, 512Mx8, Samsung, 1.5V/1.35V, -25...+85°C
Модуль памяти DDR3L SODIMM+ECC, 8GB 1866MT/s, 204-pin, 512Mx8, Samsung, 1.5V/1.35V, -25...+85°C
Модуль памяти DDR3L SODIMM+ECC, 4GB 1866MT/s, 204-pin, 512Mx8, Samsung, 1.5V/1.35V, -25...+85°C
Модуль памяти DDR3L SODIMM+ECC, 8GB 1866MT/s, 204-pin, 512Mx8 P-die, Micron, 1.5V/1.35V, -25...+85°C
Модуль памяти DDR3L SODIMM+ECC, 8GB 1600MT/s, 204-pin, 512Mx8 P-die, Micron, 1.5V/1.35V, -25...+85°C
Модуль памяти DDR3L SODIMM+ECC, 4GB 1600MT/s, 204-pin, 512Mx8 P-die, Micron, 1.5V/1.35V, -25...+85°C
Модуль памяти DDR3L SODIMM+ECC, 4GB 1866MT/s, 204-pin, 512Mx8 P-die, Micron, 1.5V/1.35V, -25...+85°C
Модуль памяти DDR3L SODIMM, 8GB 1600MT/s, 204-pin, 512Mx8, Samsung, 1.5V/1.35V, -25...+85°C
Модуль памяти DDR3L SODIMM, 4GB 1600MT/s, 204-pin, 512Mx8, Samsung, 1.5V/1.35V, -25...+85°C
Модуль памяти DDR3L SODIMM, 4GB 1600MT/s, 204-pin, 256Mx16, Samsung, 1.5V/1.35V, -25...+85°C
Модуль памяти DDR3L SODIMM, 2GB 1600MT/s, 204-pin, 256Mx16, Samsung, 1.5V/1.35V, -25...+85°C